Gallium nitride nanostructures for light-emitting diode …
Gallium nitride, GaN, features physical characteristics that are highly promising for light-emitting diode (LED) applications [1].First, the bandgap of GaN is widely tunable in the …
Selective mask formation and gallium nitride template …
SEM images of the GaN templates grown under various processing conditions with and without a SiO 2 mask: [(a) and (b)] on an AlN buffer layer at high temperature and low …
Influence of the reactor environment on the selective area …
Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creating novel device architectures and improving the structural and optical quality …
Selective area regrowth and doping for vertical gallium …
This paper reviews materials challenges and recent progress for selective area regrowth and doping for vertical gallium nitride (GaN) power devices.
Gallium Nitride Power Devices | SpringerLink
Gallium nitride's bandgap is equal to 3.4 eV, significantly higher than that of silicon (1.2 eV). The greater mobility of the gallium nitride electrons leads to a higher switching speed …
Selective area regrowth and doping for vertical gallium nitride …
This paper reviews materials challenges and recent progress for selective area regrowth and doping for vertical gallium nitride (GaN) power devices.
Silicon nitride shadowed selective area growth of low defect …
To circumvent this, a bi-layer selective area growth mask was engineered to grow up to 3.0 µ m thick epitaxy of GaN using plasma-assisted molecular beam epitaxy as an ion …
Introduction to Gallium Nitride Properties and Applications
This chapter is a general introduction to the properties and applications of gallium nitride (GaN) and related materials. In the first part, after an historical background on the relevant …
Photon extraction enhancement of praseodymium ions in gallium nitride …
Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum …
Integrated Gallium Nitride Nonlinear Photonics
Gallium nitride (GaN) as a wide bandgap material has been extensively investigated for semiconductor lighting over the past decades. Epitaxial growth of GaN on …
Parasitic masking effect in GaN SA-MOVPE using SiO2 masks …
The paper reports a phenomenon of parasitic substrate masking during selective area metalorganic vapor phase epitaxy (SA-MOVPE) of gallium nitride (GaN) using silicon …
Using both faces of polar semiconductor wafers for …
A new approach is described for fabricating devices on each of the faces of the same gallium nitride semiconductor wafer, using the cation face for photonic devices and the …
Selective mask formation and gallium nitride template …
In this study, a silicon dioxide (SiO2) mask was selectively introduced onto the lenses of a patterned sapphire substrate to suppress the growth of polycrystalline GaN. The …
Selective Area Growth of Cubic Gallium Nitride in …
SAG of cubic gallium nitride (c-GaN) by PAMBE was first reported by Meier et al. in macroscopic mask openings, employing SiO 2 as a growth mask. To research ART, ELO, …
Gallium nitride wafer slicing by a sub-nanosecond laser: effect of
Gallium nitride (GaN)-based devices surpass the traditional silicon-based power devices in terms of higher breakdown voltage, faster-switching speed, higher thermal …
A Review of Dry Etching of GaN and Related Materials
When careful attention is paid to the lithography, the etching of the SiN x mask and also the etching of the nitride laser structure, ... Gallium nitride (GaN) and its alloys of …
Ohmic Contacts to Gallium Nitride-Based Structures
Abstract Studies of the characteristics of ohmic contacts to epitaxial and ion-doped gallium-nitride layers, based on the Cr/Pt/Au metallization system, are reported. The possibility …
Selective Area Mass Transport Regrowth of Gallium Nitride
Selective area mass transport regrowth of GaN was performed on wafers with etched wells and SiO 2 mask. The samples were annealed in NH 3 and H 2 flow, with no …
Fabrication of Gallium Nitride Deep-Trench Structures …
Keywords: Gallium Nitride, Etching, Photoelectrochemistry, Trench Structure, Power Device, Superjunction Abstract Photo-electrochemical (PEC) etching was used to fabricate deep …
Selective area growth of cubic Gallium Nitride in …
In this work the possibilities of Nano Selective Area Growth (NSAG) of cubic Gallium Nitride on 3C-SiC/Si (001) pseudo substrates are studied. Growth was masked by SiO2, patterned with …
Selective mask formation and gallium nitride template …
In this study, a silicon dioxide (SiO 2) mask was selectively introduced onto the lenses of a patterned sapphire substrate to suppress the growth of polycrystalline GaN. The …
Formation of a SiO2/Ni mask for etching gallium …
... form the surface relief, a protective mask based on a layer of nickel (Ni) with a thickness of 0.25 microns and a sublayer of silicon dioxide (SiO2) with a thickness of 0.3 microns was...
Selective Area Growth of Cubic Gallium Nitride in …
The geometrical aspect ratio between mask opening and mask thickness can be designed in a way that stacking faults (SFs) terminate on the SiO 2 sidewalls. This process is called trapping as the SFs cannot propagate …
Formation of a SiO2/Ni mask for etching gallium nitride: a
... form the surface relief, a protective mask based on a layer of nickel (Ni) with a thickness of 0.25 microns and a sublayer of silicon dioxide (SiO2) with a thickness of 0.3 microns was...
Selective Area Growth of Cubic Gallium Nitride in …
In article number 2200508, Falco Meier, Donat Josef As, and co-workers present selective growth of cubic gallium nitride (c-GaN) within 20 nm openings of a nucleation mask. …